DG417, DG418, DG419
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
I
D
= - 10 mA
40
30
±8V
R
DS(on)
()
± 10 V
± 12 V
± 15 V
20
± 20 V
10
R
DS(on)
()
30
25 °C
- 55 °C
10
±5V
T
A
= 125 °C
40
20
0
- 20
- 15
- 10
-5
0
5
10
15
20
0
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
V
D
- Drain Voltage (V)
R
DS(on)
vs. V
D
and Supply Voltage
30
V+ = 15 V
V- = - 15 V
V
L
= 5 V
DG417/418: I
D(off)
, I
S(off)
DG419: I
S(off)
100
0
Q (pC)
I (pA)
200
R
DS(on)
vs. Temperature
20
150
V+ = 16.5 V
V- = - 16.5 V
V
L
= 5 V
V
IN
= 0 V
C
L
= 10 nF
1 nF
10
500 pF
100 pF
50
- 10
DG417/418: I
D(on)
DG419: I
D(off)
, I
D(on)
0
- 20
- 30
- 15
- 10
-5
0
5
10
15
- 50
- 15
- 10
-5
0
5
10
15
V
D
or V
S
- Drain or Source Voltage (V)
V
S
- Source Voltage (V)
Leakage Currents vs. Analog Voltage
3.5
3.0
2.5
V
TH
(V)
2.0
1.5
1.0
0.5
0
5
10
15
20
(V+)
25
30
35
40
V
L
= 5 V
V
L
= 7 V
Drain Charge Injection
Input Switching Threshold vs. Supply Voltages
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
www.vishay.com
5
VISHAY [ VISHAY TELEFUNKEN ]
