DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
35
r
DS(on)
– Drain-Source On-Resistance (Ω)
30
20
10
I S, I D (pA)
0
- 10
- 20
- 30
- 40
- 50
- 60
- 15
- 10
-5
0
5
10
15
V
D
or V
S
– Drain or Source Voltage (V)
I
S(off)
I
D(on)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
T
A
= 25 °C
V+ = 15 V
V- = - 15 V
V
L
= 5 V
125 °C
25
85 °C
20
25 °C
15
- 55 °C
10
30
I
D(off)
5
- 15
- 10
-5
0
5
10
15
V
D
– Drain Voltage (V)
Leakage Current vs. Analog Voltage
100
80
60
40
Q (pC)
C
L
= 10 nF
20
0
C
L
= 1 nF
- 20
- 40
- 60
- 15
- 10
-5
0
5
10
15
V
S
– Source Voltage (V)
Q (pC)
V+ = 15 V
V- = - 15 V
V
L
= 5 V
140
120
100
80
60
I
D
, I
S
Leakages vs. Temperature
V+ = 15 V
V- = - 15 V
V
L
= 5 V
C
L
= 10 nF
C
L
= 1 nF
40
20
0
- 20
- 40
- 60
- 15
- 10
-5
0
5
10
15
V
D
– Drain Voltage (V)
Charge Injection vs. Analog Voltage
240
210
3.0
180
2.5
V TH (V)
2.0
6.5 V
1.5
1.0
0.5
0
(V+) 5
10
15
20
25
30
35
40
4.5 V
5.5 V
t ON t OFF (ns)
,
V
L
= 7.5 V
150
Charge Injection vs. Analog Voltage
3.5
V+ = 15 V
V- = - 15 V
V
L
= 5 V
V
S
= 10 V
t
ON
120
t
OFF
90
60
30
0
- 55 - 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Input Switching Threshold vs. Supply Voltage
Switching Time vs. Temperature
Document Number: 70050
S-71241–Rev. E, 25-Jun-07
www.vishay.com
5
VISHAY [ VISHAY TELEFUNKEN ]
