DG408/409
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 mA
100 µA
10 µA
V
= 15 V
SUPPLY
I+
10 mA
1 mA
1 µA
V
= 2.4 V
100 nA
EN
10 nA
1 nA
100 µA
10 µA
- (I-)
V
=
15 V
SUPPLY
V
A
= 0 V
V
= 0 V or 5 V
EN
100 pA
10 pA
V
= 0 V
EN
100
1 k
10 k
100 k
1 M
10 M
- 55 - 35 - 15
5
25
45
65
85 105 125
Switching Frequency (Hz)
Temperature (°C)
ISUPPLY vs. Temperature
Positive Supply Current vs. Switching Frequency
90
80
70
60
C
= 10000 pF
= 5 Vp-p
L
20
V
IN
15
50
40
30
20
10
0
V+ = 15 V
V- = - 15 V
V+ = 15 V
V- = - 15 V
10
5
V
V
= 0 V
= 0 V
IN
EN
V+ = 12 V
V- = 0 V
0
- 10
- 55 - 35 - 15
5
25
45
65
85 105 125
- 15
- 10
- 5
0
5
10
15
Temperature (°C)
V
- Source Voltage (V)
S
Positive Supply Current vs. Temperature (DG408)
Charge Injection vs. Analog Voltage
160
140
120
120
V+ = 7.5 V
100
5 V
80
10 V
12 V
100
80
60
40
20
0
8 V
60
10 V
12 V
15 V
20 V
22 V
40
V- = 0 V
20 V
20
0
15 V
4
0
4
8
12
16
20 22
- 20 - 16 - 12 - 8 - 4
0
8
12 16
20
V
D
- Drain Voltage (V)
V
- Drain Voltage (V)
D
rDS(on) vs. VD and Supply
rDS(on) vs. VD and Supply (Single Supply)
www.vishay.com
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Document Number: 70062
S-71155–Rev. G, 11-Jun-07
VISHAY [ VISHAY ]
