DG211B/212B
Vishay Siliconix
TEST CIRCUITS
+15 V
V+
V
S
= +2 V
S
IN
3V
GND
V–
R
L
1 kW
C
L
35 pF
D
V
O
Logic
Input
3V
50%
0V
t
OFF
90%
t
r
<20 ns
t
f
<20 ns
Switch
Output
–15 V
V
O
= V
S
R
L
R
L
+ r
DS(on)
V
O
t
ON
FIGURE 2.
Switching Time
C
+15 V
C
V
S
V+
+15 V
V+
S
1
R
g
= 50
W
IN
1
0V, 2.4 V
IN
GND
V–
C
R
L
NC
0V, 2.4 V
C = RF bypass
X
TALK
Isolation = 20 log
V
S
V
O
–15 V
S
2
D
2
V
O
R
L
GND
–15 V
V
S
V
O
V–
C
D
1
50
W
V
S
R
g
= 50
W
0V, 2.4 V
S
D
V
O
IN
2
Off Isolation = 20 log
FIGURE 3.
Off Isolation
FIGURE 4.
Channel-to-Channel Crosstalk
+15 V
V+
S
IN
3V
GND
V–
D
V
O
C
L
1000 pF
IN
X
ON
V
O
DV
O
R
g
V
g
OFF
ON
DV
O
= measured voltage error due to charge injection
The charge injection in coulombs is Q = C
L
x
DV
O
–15 V
FIGURE 5.
Charge Injection
www.vishay.com
S
FaxBack 408-970-5600
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
4-6
VISHAY [ VISHAY TELEFUNKEN ]
