CNY17F
Vishay Semiconductors
Optocoupler, Phototransistor Output,
no Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Collector current
Total power dissipation
COUPLER
Isolation test voltage
between emitter and detector referred to
standard climate 23/50 DIN 50014
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering: distance to
seating plane
≥
1.5 mm
V
IO
= 500 V
R
IO
T
stg
T
amb
T
j
T
sld
V
ISO
5300
≥
7.0
≥
7.0
≥
0.4
175
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
Ω
°C
°C
°C
°C
V
RMS
mm
mm
mm
t
≤
1.0 ms
BV
CEO
I
C
I
C
P
diss
70
50
100
150
V
mA
mA
mW
t
≤
10 µs
V
R
I
F
I
FSM
P
diss
6.0
60
2.5
100
V
mA
A
mW
TEST CONDITION
SYMBOL
VALUE
UNIT
Note
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
Thermal resistance
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
V
CE
= 5.0 V, f = 1.0 MHz
C
CE
C
BC
C
EB
R
th
5.2
6.5
7.5
500
pF
pF
pF
K/W
I
F
= 60 mA
I
R
= 10 µA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
V
F
V
BR
I
R
C
O
R
th
6.0
0.01
25
750
10
1.25
1.65
V
V
µA
pF
K/W
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83607
Rev. 1.5, 07-May-08