CNY17
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
1.0
0.9
0.8
0.7
0.6
I
F
= 3 x I
C
V
CEsat
= f (I
C
)
1.0
0.9
0.8
0.7
V
CEsat
= f (I
C
)
V
CE sat
(V)
V
CE sat
0.6
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
1
10
100
I
F
= I
C
I
F
= 2 x I
C
I
F
= 3 x I
C
1
icny17_16
10
100
icny17_13
I
C
(mA)
I
C
(mA)
Fig. 13 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-1
Fig. 16 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-4
1.0
0.9
0.8
0.7
V
CEsat
= f (I
C
)
200
P
tot
= f (T
A
)
150
Transistor
V
CE sat
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
1
10
100
I
F
= 2 x I
C
I
F
= 3 x I
C
P
tot
(mW)
100
Diode
50
0
0
icny17_18
25
50
75
100
icny17_14
I
C
(mA)
T
A
(°C)
Fig. 14 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-2
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
1.0
0.9
0.8
0.7
V
CEsat
= f (I
C
)
I
F
= I
C
V
CE sat
(V)
0.6
0.5
0.4
0.3
0.2
0.1
0
1
I
F
= 2 x I
C
I
F
= 3 x I
C
10
100
icny17_15
I
C
(mA)
Fig. 15 - Saturation Voltage vs.
Collector Current and Modulation Depth CNY17-3
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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83606
Rev. 1.5, 09-Nov-05
VISHAY [ VISHAY TELEFUNKEN ]
