CNY17F
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
t
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
Unit
V
mA
A
mW
Output
Parameter
Collector-emitter breakdown
voltage
Collector current
t
≤
1.0 ms
Total power dissipation
Test condition
Symbol
BV
CEO
I
C
I
C
P
diss
Value
70
50
100
150
Unit
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
V
IO
= 500 V
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
175
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
mm
mm
mm
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83607
Rev. 1.5, 26-Oct-04
VISHAY [ VISHAY TELEFUNKEN ]
