BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
2.5
1.3
5
UNIT
V
IF = 1 A
VF
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Forward voltage
IF = 1 A, Tj = 175 °C
VF
-
V
V
R = VRRM
IR
-
μA
μA
V
Reverse current
VR = VRRM, Tj = 150 °C
IR
-
300
500
700
900
1100
-
100
-
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
V(BR)R
V(BR)R
V(BR)R
V(BR)R
V(BR)R
trr
-
V
Reverse breakdown voltage
IR = 100 μA
-
V
-
V
-
V
30
30
30
75
75
ns
ns
ns
ns
ns
trr
-
Reverse recovery time
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
trr
-
trr
-
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
600
500
1.2
1.0
VR = VRRM
RthJA = 45 K/W
RthJA = 100 K/W
RthJA = 45 K/W
200 V
0.8
0.6
0.4
0.2
0
400
300
200
400 V
600 V
800 V
RthJA = 100 K/W
100
0
1000 V
0
40
80
120
160
200
0
40
80
120
160
200
959730
Tamb - Ambient Temperature (°C)
Tj - Junction Temperature (°C)
959728
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
10
VR = VRRM
Tj = 175 °C
100
10
1
1
Tj = 25 °C
0.1
0.01
0.1
0.001
200
0
1
2
3
4
5
6
7
0
40
80
120
160
959731
959729
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 04-Sep-12
Document Number: 86040
2
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