BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2
30
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μm
Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Test condition
V
CE
= 20 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
Symbol
I
CES
I
CBO
I
EBO
V
(BR)CEO
h
FE
15
65
100
150
Min
Typ.
Max
100
100
10
Unit
μA
nA
μA
V
DC forward current transfer ratio V
CE
= 10 V, I
C
= 14 mA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Test condition
V
CE
= 10 V, I
C
= 14 mA,
f = 500 MHz
V
CB
= 10 V, f = 1 MHz
V
CE
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 10 V, I
C
= 2 mA,
Z
S
= 50
Ω,
f = 800 MHz
V
CE
= 10 V, Z
S
= 50
Ω,
Z
L
= Z
Lopt
, I
C
= 14 mA,
f = 800 MHz
V
CE
= 10 V, I
C
= 14 mA,
d
IM
= 60 dB, f
1
= 806 MHz,
f
2
= 810 MHz, Z
S
= Z
L
= 50
Ω
V
CE
= 10 V, I
C
= 14 mA,
f = 800 MHz
Symbol
f
T
C
cb
C
ce
C
eb
F
G
pe
Min
Typ.
6
0.3
0.15
0.65
1.8
16
Max
Unit
GHz
pF
pF
pF
dB
dB
Linear output voltage - two tone
intermodulation test
Third order intercept point
V
1
= V
2
120
mV
IP
3
24
dBm
www.vishay.com
2
Document Number 85033
Rev. 1.4, 29-Apr-05
VISHAY [ VISHAY TELEFUNKEN ]
