VISHAY
BFR92AF
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Description
The main purpose of this bipolar transistor is broad-
band amplification up to 1 GHz. In the space-saving
3-pin surface-mount SOT-490 package electrical per-
formance and reliability are taken to a new level cov-
ering a smaller footprint on PC boards than previous
packages. In addition to space savings, the SOT-490
provides a higher level of reliability than other 3-pin
packages, such as more resistance to moisture. Due
to the short length of its leads the SOT-490 is also
reducing package inductances resulting in some bet-
1
2
3
16867
Electrostatic sensitive device.
Observe precautions for handling.
ter electrical performance. All of these aspects make
this device an ideal choice for demanding RF applica-
tions.
Applications
Wide band amplifier up to GHz range.
Features
• High power gain
• Low noise figure
• High transition frequency
Mechanical Data
Typ:
BFR92AF
Case:
SOT-490 Plastic case
Weight:
approx. 2.5 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
BFR92AF
P2
Marking
SOT-490
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
20
15
2
30
200
150
-65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
µm
Cu
Document Number 85098
Rev. 1.3, 30-Aug-04
www.vishay.com
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