BCX70 Series
Small Signal Transistor (NPN)
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
VCE = 5 V, IC = 10 µA
—
30
40
100
120
180
250
380
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
V
V
CE = 5 V, IC = 10 µA
CE = 5 V, IC = 10 µA
CE = 5 V, IC = 10 µA
—
V
CE = 5 V, IC = 2 mA
VCE = 5 V, IC = 2 mA
220
310
460
630
—
—
—
—
DC Current Gain
hFE
—
V
V
CE = 5 V, IC = 2 mA
CE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
VCE = 1 V, IC = 50 mA
70
90
100
VCE = 1 V, IC = 50 mA
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
50
100
—
—
350
550
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCEsat
VBEsat
mV
mV
IC = 10 mA, IB = 0.25 mA
IC = 50 mA, IB = 1.25 mA
600
700
—
—
850
1050
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 µA
VCE = 1 V, IC = 50 mA
550
—
—
650
520
780
750
—
—
Base-Emitter Voltage
VBE
mV
VCB = 45 V, VBE = 0 V
VCB = 45 V, VBE = 0 V
TA = 150°C
—
—
—
—
20
20
nA
Collector Cut-off Current
ICBO
µA
Emitter Cut-off Current
Gain-Bandwidth Product
IEBO
fT
VEB = 4 V, IC = 0
—
—
20
—
nA
VCE = 5 V, IC = 10 mA
f = 100 MHz
100
250
MHz
Collector-Base Capacitance
Emitter-Base Capacitance
CCBO VCB = 10 V, f = 1 MHz, IE = 0
CEBO VEB = 0.5 V, f = 1 MHz, IC = 0
VCE = 5 V, IC = 200 µA,
—
—
2.5
8
—
—
pF
pF
Noise Figure
F
RS = 2 kΩ, f = 1 kHz,
—
2
6
dB
B = 200 Hz
BCX70G
—
—
—
—
200
260
330
520
BCX70H
BCX70J
BCX70K
VCE = 5 V, IC = 2 mA,
f = 1.0 kHZ
Small Signal Current Gain
hfe
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
Turn-on Time at RL = 990Ω (see fig. 1)
Turn-off Time at RL = 990Ω (see fig. 1)
ton
toff
—
—
85
150
800
ns
ns
VCC = 10 V, IC = 10 mA,
IB(on) = -IB(off) = 1 mA
480
VISHAY [ VISHAY ]
