BC856 THRU BC859
Small Signal Transistors (PNP)
SOT-23
♦
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
FEATURES
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
♦
Especially suited for automatic insertion in
Top View
.056 (1.43
)
.052 (1.33
)
thick- and thin-film circuits.
♦
These transistors are subdivided into three groups A, B
and C according to their current gain. The type BC856 is
available in groups A and B, however, the types BC857,
BC858 and BC859 can be supplied in all three groups.
The BC859 is a low noise type.
.045 (1.15)
.037 (0.95)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
♦
As complementary types, the NPN transistors
BC846 … BC849 are recommended.
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
Marking code
Type
BC856A
B
BC857A
B
C
BC858A
B
C
MECHANICAL DATA
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Marking
3A
3B
3E
3F
3G
3J
3K
3L
Type
BC859A
B
C
Marking
4A
4B
4C
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Collector-Base Voltage
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
–V
CBO
–V
CBO
–V
CBO
–V
CES
–V
CES
–V
CES
–V
CEO
–V
CEO
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
T
j
T
S
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
310
1)
150
– 65 to +150
Unit
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
°C
°C
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50 °C
Junction Temperature
Storage Temperature Range
4/98
VISHAY [ VISHAY TELEFUNKEN ]
