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Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction to ambient air
Junction temperature
Storage temperature range
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
300
175
- 65 to + 175
Unit
K/W
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Test condition
I
F
= 100 mA
V
R
= 20 V
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
T
j
= 100 °C, V
R
= 20 V
T
j
= 100 °C, V
R
= 50 V
T
j
= 100 °C, V
R
= 100V
T
j
= 100 °C, V
R
= 150 V
T
j
= 100 °C, V
R
= 200 V
Breakdown voltage
I
R
= 100
μA,
t
p
/T = 0.01,
t
p
= 0.3 ms
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
Diode capacitance
Differential forward resistance
Reverse recovery time
V
R
= 0, f = 1 MHz
I
F
= 10 mA
I
F
= I
R
= 30 mA,
i
R
= 3 mA,
R
L
= 100
Ω
Part
Symbol
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
t
rr
25
60
120
200
250
1.5
5
50
Min
Typ.
Max
1000
100
100
100
100
100
15
15
15
15
15
Unit
mV
nA
nA
nA
nA
nA
μA
μA
μA
μA
μA
V
V
V
V
V
pF
Ω
ns
www.vishay.com
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Document Number 85543
Rev. 1.6, 20-Apr-06
VISHAY [ VISHAY TELEFUNKEN ]
