BAS85
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current
Forward voltage
Test condition
I
R
= 10 µA (pulsed)
V
R
= 25 V
Pulse test t
p
< 300 µs,
I
F
= 0.1 mA
Pulse test t
p
< 300 µs, I
F
= 1 mA
Pulse test t
p
< 300 µs,
I
F
= 10 mA
Pulse test t
p
< 300 µs,
I
F
= 30 mA
Pulse test t
p
< 300 µs,
I
F
= 100 mA
Diode capacitance
Reverse recovery time
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
I
rr
= 1 mA,
Symbol
V
(BR)R
I
R
V
F
V
F
V
F
V
F
V
F
C
tot
t
rr
500
800
10
5
Min
30
0.2
2
240
320
400
Typ.
Max
Unit
V
µA
mV
mV
mV
mV
mV
pF
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
P
R
- Reverse Power Dissipation (mW)
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
P
R
- Limit
at
80
%
V
R
R
thJA
= 540 kW
P
R
- Limit
at 100 %
V
R
V
R
= 30
V
1000
V
R
=
V
RRM
100
I
R
- Reverse Current (µA)
10
1
25
15823
50
75
100
125
150
15822
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 85510
Rev. 1.8, 27-Mar-06
VISHAY [ VISHAY TELEFUNKEN ]
