BAS19 thru BAS21
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diodes
Mounting Pad Layout
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.031 (0.8)
0.035 (0.9)
Top View
0.079 (2.0)
0.037 (0.95)
0.037 (0.95)
1
2
max. .004 (0.1)
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode in case SOT-23, especially
suited for automatic insertion.
• These diodes are also available in other case
styles including: the SOD-123 case with the type
designations BAV19W to BAV21W, the Mini-MELF
case with the type designation BAV101 to BAV103,
the DO-35 case with the type designations BAV19
to BAV21 and the SOD-323 case with type
designation BAV19WS to BAV21WS.
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
.045 (1.15)
.037 (0.95)
Mechanical Data
Marking
BAS19 = A8
BAS20 = A81
BAS21 = A82
Top View
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
(T
A
= 25°C unless otherwise noted)
Maximum Ratings and Thermal Characteristics
Parameter
Continuous Reverse Voltage
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
at t = 1µs
at t = 1s
Symbol
V
R
Value
100
150
200
120
200
250
2.5
0.5
200
(1)
200
(2)
625
250
(2)
430
(2)
150
–65 to +150
Unit
V
Repetitive Peak Reverse Voltage
V
RRM
V
Non-Repetitive Peak Forward Current
Average Rectified Forward Current
Repetitive Peak Forward Current
Power Dissipation up to T
amb
= 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
I
FSM
I
F(AV)
I
F
I
FRM
P
tot
R
ΘJA
T
j
T
S
A
mA
mA
mA
mW
°C/W
°C
°C
(av. over any 20ms period)
Forward DC Current at T
amb
= 25°C
Notes:
(1) Measured under pulse conditions; Pulse time = tp
≤
0.3ms
(2) Device on fiberglass substrate, see layout on next page
Document Number 88127
14-May-02
www.vishay.com
1
VISHAY [ VISHAY TELEFUNKEN ]
