BAS16
Vishay Telefunken
Silicon Epitaxial Planar Diode
Features
D
Ultra fast switching speed
D
Surface mount package ideally
suited for automatic insertion
D
High conductance
94 8550
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Test Conditions
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
=Working peak reverse voltage
=DC Blocking voltage
Peak forward surge current
t
p
=1s
g
t
p
=1
m
s
Average forward current
half wave rectification with resistive
load and f
≥
50 MHz, on ceramic
substrate 8mmx10mmx0.7mm
Forward current
on ceramic substrate
8mmx10mmx0.7mm
Power dissipation
on ceramic substrate
8mmx10mmx0.7mm
Junction and storage
temperature range
Symbol
V
RM
V
RRM
=V
RWM
=V
R
I
FSM
I
FSM
I
FAV
Value
100
75
Unit
V
V
1
2
150
A
A
mA
I
F
P
tot
T
j
=T
stg
300
350
–55...+150
mA
mW
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on ceramic substrate
8mmx10mmx0.7mm
Symbol
R
thJA
Value
357
Unit
K/W
Document Number 85539
Rev. 1, 01-Apr-99
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