50RIA Series
Medium Power Thyristors
Vishay High Power Products
(Stud Version), 50 A
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
Typical delay time
Typical turn-off time
V
DRM
≤
600 V
V
DRM
≤
1600 V
dI/dt
SYMBOL
TEST CONDITIONS
T
C
= 125 °C, V
DM
= Rated V
DRM
,
Gate pulse = 20 V, 15
Ω,
t
p
= 6 µs, t
r
= 0.1 µs maximum
I
TM
= (2 x rated dI/dt) A
T
C
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 10 A dc resistive circuit
Gate pulse = 10 V, 15
Ω
source, t
p
= 20 µs
T
C
= 125 °C, I
TM
= 50 A, reapplied dV/dt = 20 V/µs
dIr/dt = - 10 A/µs, V
R
= 50 V
VALUES
200
A/µs
100
0.9
µs
110
UNITS
t
d
t
q
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
200
500
(1)
V/µs
UNITS
Note
(1)
Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
T
J
= - 40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
V
GD
T
J
= - 40 °C
T
J
= 25 °C
T
J
= T
J
maximum,
V
DRM
= Rated voltage
T
J
= T
J
maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
VALUES
10
W
2.5
2.5
20
V
10
250
100
50
3.5
V
2.5
5.0
mA
mA
A
UNITS
DC gate voltage not to trigger
0.2
V
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
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