4N32/ 4N33
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base breakdown voltage
Emitter-collector breakdown voltage
Collector (load) current
Power dissipation
Derate linearly
Test condition
Symbol
BV
CEO
BV
EBO
BV
CBO
BV
ECO
I
C
P
diss
Value
30
8.0
50
5.0
125
150
2.0
Unit
V
V
V
V
mA
mW
mW/°C
Coupler
Parameter
Total dissipation
Derate linearly
Isolation test voltage (between
emitter and detector, Standard
Climate: 23 °C/ 50 %RH, \\nDIN
500 14)
Leakage Path
Air Path
Isolation Resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storange temperature
Operating temperature
Lead soldering time
at 260 °C
R
IO
R
IO
T
amb
T
stg
V
ISO
Test condition
Symbol
P
tot
Value
250
3.3
5300
Unit
mW
mW/°
V
RMS
7.0
7.0
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
10
mm min.
mm min.
Ω
Ω
°C
°C
s
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Test condition
I
F
= 50 mA
V
R
= 3.0 V
V
R
= 0 V
Symbol
V
F
I
R
C
O
Min
Typ.
1.25
0.1
25
Max
1.5
100
Unit
V
µ
pF
www.vishay.com
2
Document Number 83736
Rev. 1.4, 26-Jan-05
VISHAY [ VISHAY TELEFUNKEN ]
