2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
1.000
6
On-Resistance vs. Gate-to-Source Voltage
5
T
J
= 125_C
I
S
– Source Current (A)
0.100
r
DS(on)
– On-Resistance (
Ω )
I
D
= 50 mA
4
500 mA
3
T
J
= 25_C
0.010
2
1
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
12
14
16
18
20
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.50
I
D
= 250
mA
0.25
V
GS(th)
– Variance (V)
–0.00
–0.25
–0.50
–0.75
–50
–25
0
25
50
75
100
125
150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
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