2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
1.0
V
GS
= 10, 9, 8, 7 V
0.8
I
D
– Drain Current (A)
6.5 V
6V
I
D
– Drain Current (A)
5.5 V
0.6
5V
0.4
4.5 V
4V
3.5 V
3V
0.0
0
1
2
3
4
5
0.8
T
J
= –55_C
25_C
0.6
125_C
0.4
1.0
Transfer Characteristics
0.2
0.2
2.5 V
2, 1 V
6
0.0
0
1
2
3
4
5
6
7
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
7
6
r
DS(on)
– On-Resistance (
Ω )
r
DS
@ 5 V = V
GS
5
4
3
2
1
0
0.0
r
DS
@ 10 V = V
GS
C – Capacitance (pF)
40
60
V
GS
= 0 V
f = 1 MHz
50
Capacitance
30
C
iss
20
C
oss
10
C
rss
0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
35
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
20
I
D
= 0.5 A
V
GS
– Gate-to-Source Voltage (V)
16
Gate Charge
2.0
On-Resistance vs. Junction Temperature
r
DS(on)
– On-Resistance (
Ω )
(Normalized)
V
GS
= 10 V, r
DS
@ 0.5 A
1.5
12
V
DS
= 30 V
8
1.0
V
GS
= 5 V, r
DS
@ 0.05 A
0.5
4
0
0
400
800
1200
1600
2000
2400
0.0
–55
–30
–5
20
45
70
95
120
145
Q
g
– Total Gate Charge (pC)
T
J
– Junction Temperature (_C)
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11-4
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
VISHAY [ VISHAY TELEFUNKEN ]
