1N5391 thru 1N5399
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Instantaneous Forward Current (A)
10
1
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
Junction Capacitance (pF)
10
0.1
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
100
T
J
= 150 °C
100
Transient Thermal Impedance (°C/W)
60
80
100
Instantaneous Reverse Leakage
Current (μA)
10
10
1
T
J
= 25 °C
1
0.1
0.01
0
20
40
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number: 88514
Revision: 17-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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