1N4728A to 1N4764A
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BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
W 1.0
0.8
P
tot
0.6
Vishay Semiconductors
0.4
0.2
18481
0
100
T
amb
200 °C
Fig. 1 -
Admissible Power Dissipation vs. Ambient Temperatur
PACKAGE DIMENSIONS
in millimeters (inches):
DO-41_1N47xx
Cathode Identification
Ø 0.86 max. [0.034]
Ø 0.7 min. [0.027]
Ø 2.6 max. [0.102]
26 min. [1.024]
4.1 max. [0.161]
3.3 min. [0.128]
26 min. [1.024]
Document no.
S8-V-3901.04-001(4)
Rev. 1 - Date: 30. Nov. 2011
22624
Rev. 2.2, 08-Dec-11
Document Number: 85816
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Ø 2.1 min. [0.081]