1N4148
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Test condition
I
F
= 10 mA
V
R
= 20 V
V
R
= 20 V, T
j
= 150 °C
V
R
= 75 V
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
I
R
= 100 µA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
V
HF
= 2 V, f = 100 MHz
I
F
= I
R
= 10 mA, i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Symbol
V
F
I
R
I
R
I
R
V
(BR)
C
D
r
t
rr
t
rr
45
8
4
100
4
Min.
Typ.
Max.
1000
25
50
5
Unit
mV
nA
µA
µA
V
pF
%
ns
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
1.2
1.0
I
F
= 100 mA
1000
V
F
- Forward
Voltage
(V)
I
R
- Reverse Current (nA)
T
j
= 25 °C
100
0.8
10 mA
0.6
0.4
0.1 mA
0.2
0
- 30
1 mA
Scattering Limit
10
1
0
30
60
90
120
94 9098
1
10
V
R
- Reverse
Voltage
(V)
100
94 9169
T
j
- Junction Temperature (°C)
Figure 1. Forward Voltage vs. Junction Temperature
Figure 3. Reverse Current vs. Reverse Voltage
1000
1N4148
I
F
- Forward Current (mA)
100
Scattering Limit
10
1
T
J
= 25 °C
0
0.4
0.8
1.2
1.6
2.0
0.1
94 9170
V
F
- Forward
Voltage
(V)
Figure 2. Forward Current vs. Forward Voltage
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For technical questions within your region, please contact one of the following: Document Number 81857
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.3, 29-Oct-10
VISHAY [ VISHAY TELEFUNKEN ]
