1N4148.1N4448
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Features
D
Electrically equivalent diodes: 1N4148 – 1N914
1N4448 – 1N914B
Applications
94 9367
Extreme fast switches
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Test Conditions
Type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
V
P
V
T
j
T
stg
Value
100
75
2
500
300
150
440
500
200
–65...+200
Unit
V
V
A
mA
mA
mA
mW
mW
°
C
°
C
t
p
=1
m
s
V
R
=0
l=4mm, T
L
=45
°
C
l=4mm, T
L
25
°
C
x
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Document Number 85521
Rev. 2, 01-Apr-99
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