1N4148WS-V
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
10
3
1.1
T
j
= 25 °C
f = 1 MHz
10
2
T
j
= 100 °C
T
j
= 25 °C
1.0
C
D
(0
V)
I
F
(mA)
C
D
(V
R
)
10
0.9
1
0.8
10
-1
0.7
10
17437
-2
0
1
2
17440
0
2
4
6
8
10
V
F
(V)
V
R
(V)
Figure 1. Forward characteristics
Figure 4. Relative Capacitance vs. Reverse Voltage
10
4
5
2
T
j
= 25 °C
f = 1 kHz
10
4
5
2
10
3
5
10
3
5
I
R
(nA)
r
f
(Ω)
2
2
10
2
5
2
10
2
5
2
10
5
2
10
5
2
V
R
= 20
V
1
10
-2
17438
10
-1
1
10
10
2
17441
0
100
200
I
F
(mA)
T
j
(°C)
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 5. Leakage Current vs. Junction Temperature
250
P
tot
- Power Dissipation (mW)
200
150
100
50
0
0
20324
50
100
150
200
T
amb
- Ambient Temperature (°C)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85751
Rev. 1.7, 14-Sep-07
www.vishay.com
3
VISHAY [ VISHAY TELEFUNKEN ]
