V23990-P864-F49-PM
V23990-P864-F48-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
V r [V] or I C [A] or
V GE [V] or
V GS [V]
V CE [V] or I F [A] or
T j
Min
Max
V DS [V]
I D [A]
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,15
200
350
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
VCE=VGE
0,00043
30
V
V
1,57
1,79
15
0
600
0
mA
nA
Ω
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
106
104
14
Rise time
20
ns
146
171
92
112
0,47
0,66
0,67
0,91
t d(off)
t f
Turn-off delay time
Rgon=16Ω
Rgoff=16Ω
±15
300
30
Fall time
E on
Turn-on energy loss
mWs
pF
E off
Turn-off energy loss
C ies
C oss
C rss
Q G
Input capacitance
1630
108
50
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
480
30
167
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(jh)
Thermal resistance chip to heatsink
1,60
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,64
1,55
2,2
V F
I R
Diode forward voltage
30
30
V
mA
A
200
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
27
34
I RRM
t rr
146
253
1,34
2,65
1752
815
ns
Rgon=16Ω
±15
300
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
mC
A/ms
mWs
( di rf/dt )max
E rec
Tj=150°C
0,57
Thermal grease
thickness≤50um
λ = 1 W/mK
R th(jh)
Thermal resistance chip to heatsink
2,08
K/W
Thermistor
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
21,5
kΩ
%
R100=1486 Ω
-4,5
4,5
210
3,5
mW
mW/K
K
B(25/50)
3884
3964
B(25/100)
B-value
K
Vincotech NTC Reference
F
copyright Vincotech
3
20 Apr. 2015 / Revision 2