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V23990-P848-X4X-P1-14 参数 Datasheet PDF下载

V23990-P848-X4X-P1-14图片预览
型号: V23990-P848-X4X-P1-14
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial Drives Embedded Generation]
分类和应用:
文件页数/大小: 22 页 / 1618 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P848-A48/A49/C48/C49-PM  
preliminary datasheet  
Maximum Ratings  
Tj=25°C, unless otherwise specified  
Value  
Condition  
Parameter  
Symbol  
Unit  
Inverter Diode  
Tj=25°C  
Peak Repetitive Reverse Voltage  
DC forward current  
VRRM  
IF  
1200  
10  
V
A
Th=80°C  
Tc=80°C  
Th=80°C  
Tc=80°C  
Th=80°C  
Tc=80°C  
Tj=Tjmax  
32  
37  
IFRM  
Ptot  
tp limited by Tjmax  
Tj=Tjmax  
Repetitive peak forward current  
Power dissipation per Diode  
Maximum Junction Temperature  
A
W
°C  
Tjmax  
175  
Brc Transistor  
1200  
8
VCE  
IC  
Collector-emitter break down voltage  
DC collector current  
V
A
Th=80°C  
Tc=80°C  
Th=80°C  
Tj=Tjmax  
tp=1ms  
12  
ICpuls  
Ptot  
VGE  
Repetitive peak collector current  
Power dissipation per IGBT  
Gate-emitter peak voltage  
Short circuit ratings  
A
Th=80°C  
Tc=80°C  
32  
Tj=Tjmax  
W
V
±20  
tSC  
Tj150°C  
10  
µs  
V
VCC  
VGE=15V  
800  
Tjmax  
Maximum Junction Temperature  
175  
°C  
Brc. Diode  
Tj=25°C  
1200  
7
VRRM  
IF  
IFRM  
Ptot  
Peak Repetitive Reverse Voltage  
DC forward current  
V
A
Th=80°C  
Tc=80°C  
Th=80°C  
Tc=80°C  
Th=80°C  
Tc=80°C  
Tj=Tjmax  
tp=1ms  
6
Repetitive peak forward current  
Power dissipation per Diode  
Maximum Junction Temperature  
A
18  
Tj=Tjmax  
W
°C  
Tjmax  
150  
Thermal Properties  
Tstg  
Top  
Storage temperature  
-40…+125  
-40…+125  
°C  
°C  
Operation temperature under switching condition  
Insulation Properties  
Insulation voltage  
Creepage distance  
Clearance  
Vis  
VDC  
mm  
mm  
t=2s  
4000  
min 12,7  
min 12,7  
copyright Vincotech  
2
Revision: 1