V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Value
Condition
Parameter
Symbol
Unit
Inverter Diode
Tj=25°C
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
1200
10
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj=Tjmax
32
37
IFRM
Ptot
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
W
°C
Tjmax
175
Brc Transistor
1200
8
VCE
IC
Collector-emitter break down voltage
DC collector current
V
A
Th=80°C
Tc=80°C
Th=80°C
Tj=Tjmax
tp=1ms
12
ICpuls
Ptot
VGE
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
A
Th=80°C
Tc=80°C
32
Tj=Tjmax
W
V
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
Brc. Diode
Tj=25°C
1200
7
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj=Tjmax
tp=1ms
6
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
A
18
Tj=Tjmax
W
°C
Tjmax
150
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
-40…+125
°C
°C
Operation temperature under switching condition
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
VDC
mm
mm
t=2s
4000
min 12,7
min 12,7
copyright Vincotech
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Revision: 1