V23990-P848-A48/A49/C48/C49-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Brc Transistor
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,00015
4
V
V
1,96
2,27
15
0,05
200
0
1200
0
mA
nA
ꢁ
20
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
78
75
18
Rise time
24
ns
170
217
81
103
0,24
0,36
0,22
0,33
td(off)
tf
Turn-off delay time
Rgon=64Ohm
Rgoff=64Ohm
15
600
4
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
250
25
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
15
960
4
25
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,95
K/W
Brc. Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,88
1,79
2,35
250
VF
Ir
Diode forward voltage
4
4
V
ꢂA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
15
15
600
600
4
5
IRRM
trr
A
276
485
0,43
0,87
37
31
0,43
0,87
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=64Ohm
4
uC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,86
K/W
Thermistor
R25
Tol. ±13%
Tol. ±5%
Tj=25°C
19,1
22
24,9
k ꢁ
Rated resistance
R100
Tj=100°C
1411
1486
1560
ꢁ
Power dissipation given Epcos-Typ
B-value
P
Tj=25°C
Tj=25°C
210
mW
K
B(25/100)
Tol. ±3%
4000
copyright Vincotech
4
Revision: 1
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