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V23990-P848-C59-PM 参数 Datasheet PDF下载

V23990-P848-C59-PM图片预览
型号: V23990-P848-C59-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 22 页 / 773 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P848-A58/A59/C58/C59-PM  
preliminary datasheet  
Output Inverter  
Figure 9  
Output inverter IGBT  
Figure 10  
Output inverter IGBT  
Typical switching times as a  
function of collector current  
t = f(IC)  
Typical switching times as a  
function of gate resistor  
t = f(RG)  
1
1
tdoff  
tdon  
tf  
tdoff  
tf  
0,1  
0,1  
tdon  
tr  
tr  
0,01  
0,01  
0,001  
0,001  
R G ( Ω )  
0
2
4
6
IC (A)  
8
0
60  
120  
180  
240  
300  
With an inductive load at  
With an inductive load at  
Tj =  
VCE  
VGE  
Tj =  
VCE  
VGE  
IC =  
150  
600  
±15  
64  
°C  
V
150  
600  
±15  
4
°C  
V
=
=
=
=
V
V
Rgon  
Rgoff  
=
=
A
64  
Figure 11  
Output inverter FRED  
Figure 12  
Output inverter FRED  
Typical reverse recovery time as a  
function of collector current  
Typical reverse recovery time as a  
function of IGBT turn on gate resistor  
trr = f(Ic)  
trr = f(Rgon)  
0,7  
0,7  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
trr  
trr  
trr  
trr  
0
0
0
0
I C (A)  
R Gon ( Ω )  
300  
2
4
6
8
60  
120  
180  
240  
At  
At  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
600  
°C  
V
25/150  
600  
4
°C  
V
=
=
±15  
V
A
Rgon  
=
VGE =  
64  
±15  
V
copyright Vincotech  
7
Revision: 1