V23990-P840-A48/A49/C48/C49-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Diode Inverter
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
1200
18
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
IFRM
Ptot
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
30
38
A
Th=80°C
Tc=80°C
W
°C
Tjmax
175
Transistor BRC
VCE
IC
Collector-emitter voltage
DC collector current
1200
12
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
Icpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Th=80°C
24
40
A
Th=80°C
Tc=80°C
W
V
±20
tSC
Tj≤150°C
10
ꢁs
VCC
VGE=15V
800
V
Tjmax
Maximum Junction Temperature
175
°C
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
10
V
A
Th=80°C
Tc=80°C
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Th=80°C
15
22
A
W
°C
Th=80°C
Tc=80°C
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Tjop
-40…+125
-40…+150
°C
°C
Insulation properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
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Revision: 2
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