V23990-P829-F10/ F108-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5,00
1,60
5,80
6,50
2,30
0,02
650
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0017
50
V
V
1,93
2,35
15
0
1200
0
mA
nA
ꢀ
20
4
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
96
101
17
Rise time
24
ns
214
281
87
122
2,70
4,21
2,74
4,53
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=8 ꢀ
±15
600
50
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
2770
205
160
240
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
Vcc=960
±15
50
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
0,92
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,4
1,83
1,80
81
2,3
VF
IRRM
trr
Diode forward voltage
50
50
V
A
Peak reverse recovery current
Reverse recovery time
85
139
316
4,80
9,71
4803
1209
1,79
3,97
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=8 ꢀ
±15
600
nC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,26
K/W
Thermistor
R25
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Tol. ±5%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
4,2
4,7
2,6
5,8
kꢀ
%/K
mW
K
DR/R
R100=435ꢀ
P
210
3530
B(25/100)
Tol. ±3%
copyright by Vincotech
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Revision: 3
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