V23990-P768-A-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter FWD
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
1200
V
A
Th=80°C
Tc=80°C
60
80
Tj=Tjmax
IFRM
Ptot
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
100
A
Th=80°C
Tc=80°C
114
173
W
°C
Tjmax
175
Brake IGBT
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
V
A
Th=80°C
Tc=80°C
44
45
Tj=Tjmax
ICpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
105
A
Th=80°C
Tc=80°C
130
198
W
V
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
900
Tjmax
Maximum Junction Temperature
175
°C
Brake Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
V
A
Th=80°C
Tc=80°C
10
10
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Brake Inverse Diode
20
A
Th=80°C
Tc=80°C
50
75
W
°C
Tjmax
Maximum Junction Temperature
175
Brake FWD
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
25
25
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
50
A
Th=80°C
Tc=80°C
75
W
°C
114
Tjmax
175
Thermal properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+Tjmax-25
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Revision: 3
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