V23990-P767-A-PM
Characteristic Values
Conditions
Vr [V] or
Value
Typ
Parameter
Symbol
Unit
IC [A] or
IF [A] or
V
GE [V] or
VCE [V] or
DS [V]
Tj
Min
Max
VGS [V]
V
ID [A]
Brake IGBT
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,2
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
VCE=VGE
0,00085
25
V
V
1,87
2,32
15
0
0,25
200
1200
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
149
150
23
Rise time
28
ns
227
300
73,2
108
1,9
2,84
1,25
2,1
td(off)
tf
Turn-off delay time
Rgoff=32 ꢀ
Rgon=32 ꢀ
±15
600
25
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
1393
110
82
Coss
Crss
QGate
RthJH
RthJC
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
15
960
143
0,85
0,56
nC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
Brake Inverse Diode
Tj=25°C
Tj=150°C
1,1
1,69
1,63
2,1
VF
Diode forward voltage
10
V
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,92
1,27
K/W
K/W
Brake FWD
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,93
1,91
2,2
10
VF
Ir
Diode forward voltage
25
25
V
ꢁA
Reverse leakage current
±15
±15
600
600
21,57
24,85
318
IRRM
trr
Peak reverse recovery current
Reverse recovery time
A
ns
510
2,41
4,97
382
76
2,41
4,97
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=32ꢀ
25
µC
di(rec)max
/dt
A/µs
mWs
Erec
RthJH
RthJC
Thermal grease
thickness≤50µm
λ = 0,61 W/m·K
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
1,26
0,83
K/W
Thermistor
R25
Rated resistance
Deviation of R100
Power dissipation given Epcos-Typ
B-value
Tol. ±5%
Tj=25°C
Tc=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
23,1
kꢀ
%/K
mW
K
DR/R
R100=1486.1ꢀ
P
210
4000
B(25/100)
Tol. ±3%
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5
Revision: 3
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