V23990-P718-*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Brake Inverse Diode
Tj=25°C
Tj=125°C
1
1,60
1,57
2,2
VF
Diode forward voltage
3
V
Thermal grease
RthJH
thickness≤50um
λ = 0,61 W/mK
Thermal resistance chip to heatsink per chip
3,22
K/W
Brake FWD
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,07
2,45
2,3
VF
Ir
Diode forward voltage
15
25
V
ꢀA
250
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
±15
±15
300
300
16,77
17,11
332
IRRM
trr
A
ns
505
1,79
2,78
495
210
1,79
2,78
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Rgon=32 ꢁ
25
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 0,61 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
2,40
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Revision: 3
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