V23990-P718-*-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Brake IGBT
VCE
IC
Collector-emitter Break down voltage
DC collector current
1200
V
A
Th=80°C
Tc=80°C
31
40
Tj=Tjmax
ICpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Pulsed collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
105
A
Th=80°C
Tc=80°C
73
W
V
110
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
1200
Tjmax
Maximum Junction Temperature
150
°C
Brake Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
V
A
Th=80°C
Tc=80°C
8
8
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Brake Inverse Diode
6
A
Th=80°C
Tc=80°C
20
30
W
°C
Tjmax
Maximum Junction Temperature
150
Brake FWD
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
14
19
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
30
A
Th=80°C
Tc=80°C
29
44
W
°C
Tjmax
150
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
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Revision: 3