V23990-P649-G/H-PM
preliminary datasheet
Maximum Ratings
Condition
Parameter
Symbol
Value
Unit
Transistor BRC
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
25
V
A
Tj=Tjmax
Th=80°C
Th=80°C
Icpuls
Ptot
VGE
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings*
75
A
57
W
V
±20
tSC
Tj≤150°C
10
μs
V
VCC
VGE=15V
1200
Tjmax
Maximum junction temperature
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
BRC inverse diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
Tj=25°C
1200
6
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
6
A
18
W
°C
Tjmax
150
Diode BRC
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
Tj=25°C
1200
15
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum junction temperature
30
33
A
W
°C
Tjmax
150
Thermal properties
Storage temperature
Operation temperature
Tstg
Top
-40...+125
-40...+110
°C
°C
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