V23990-P640-G/H-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr(V) or
VGE(V) or
IC(A) or IF(A)
or ID(A)
VCE(V) or
T(°C)
Min
Max
VGS(V)
VDS(V)
Diode BRC
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,7
1,68
2,4
VF
Ir
Diode forward voltage
35
V
mA
A
250
Reverse leakage current
1200
600
IRRM
trr
Peak reverse recovery current
Reverse recovery time
56,4
279
ns
Rgon=32Ohm
Rgoff=16Ohm
Qrr
Reverse recovered charge
15
35
mC
A/ms
mWs
K/W
K/W
5,15
2460
di(rec)max
/dt
Peak rate of fall of reverse recovery current
Reverse recovery energy
Erec
RthJH
RthJC
1,94
1,86
Thermal grease
thickness ≤50um λ=
0.61W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
n.A.
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