V23990ꢀP629ꢀL48ꢀPM V23990ꢀP629ꢀL48YꢀPM
V23990ꢀP629ꢀL49ꢀPM V23990ꢀP629ꢀL49YꢀPM
datasheet
INPUT BOOST
Figure 5
BOOST IGBT
Figure 6
BOOST IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
Typical switching energy losses
as a function of gate resistor
E = f(R G)
10
10
Eon High T
8
8
Eon Low T
Eon High T
6
6
Eon Low T
Eoff High T
Eoff High T
4
4
Eoff Low T
Eoff Low T
2
2
0
0
0
16
32
48
64
80
)
R G
(
Ω
I
C (A)
80
0
20
40
60
With an inductive load at
With an inductive load at
T j =
T j =
25/125
700
±15
16
°C
V
25/125
700
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
40
V
=
I D =
ꢁ
ꢁ
A
=
16
Figure 7
BOOST FWD
Figure 8
BOOST FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
Typical reverse recovery energy loss
as a function of gate resistor
E rec = f(R G)
0,008
0,006
0,004
0,002
0,008
0,006
0,004
0,002
Erec High T
Erec High T
Erec Low T
Erec Low T
R (K0/W)
0
R (K/W)
0
16
32
48
64
80
R G ( Ω )
0
20
40
60
80
I C (A)
With an inductive load at
With an inductive load at
T j =
T j =
25/125
700
±15
16
°C
V
25/125
700
°C
V
V CE
=
V CE
V GE
=
V GE
R gon
R goff
=
=
V
±15
40
V
=
I C =
ꢁ
ꢁ
A
=
16
copyright Vincotech
6
11 Sep. 2015 / Revision 3
VINCOTECH [ VINCOTECH ]
