V23990-P623-L82-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Boost FWD ( D1, D4 )
Peak Repetitive Reverse Voltage
Forward average current
Surge forward current
VRRM
IFAV
650
V
A
A
Th=80°C
Tc=80°C
51
64
Tj=Tjmax
tp=10ms
IFSM
225
250
100
Tj=25°C
I2t
A2s
A
I2t-value
IFRM
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Th=80°C
Tc=80°C
88
Ptot
W
134
Tjmax
175
°C
Boost Inverse Diode ( D9 , D10 )
Peak Repetitive Reverse Voltage
Forward average current
VRRM
IFAV
Tc=25°C
Tj=Tjmax
650
V
A
A
Th=80°C
Tc=80°C
21
27
Surge forward current
IFSM
50
12,5
20
tp=10ms
Tj=25°C
I2t
A2s
A
I2t-value
IFRM
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
Th=80°C
Tc=80°C
42
63
Ptot
W
Tjmax
175
°C
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
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