V23990ꢀP590ꢀJ09ꢀPM / V23990ꢀP590ꢀJ19ꢀPM /
V23990ꢀP600ꢀI09ꢀPM / V23990ꢀP600ꢀI19ꢀPM
datasheet
Rectifier Thyristor
Conditions
Value
Typ
Parameter
Symbol
Unit
dIF/dt
[A/us]
V
I
T
r [V] F [A]
j [°C] Min
Max
Static
25
1,09
1,02
1,2
Forward voltage
110
V
VF
125
25
130
25
130
25
130
25
130
25
130
25
130
25
130
25
130
25
130
25
130
25
130
25
130
25
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
mꢂ
mA
µs
V
to
0,85
r
t
r
3,2
0,2
1600
1072
1072
I
1
2
Gate controlled delay time
Gate controlled rise time
Tvj=25°C IG=1A
dig/dt=1A/μs
VD=0,67*VDRM
t
t
GD
GR
µs
Critical rate of rise of offꢀstate voltage
Critical rate of rise of onꢀstate current
Circuit commutated turnꢀoff time
Holding current
V/µs
A/µs
µs
(dv/dt)cr
(di/dt)cr
1000
100
t
q
H
L
150
220
550
1,98
100
mA
mA
V
I
Latching current
I
Gate trigger voltage
V
GT
GT
Gate trigger current
mA
V
I
Gate nonꢀtrigger voltage
V
GD
130
25
115
0,25
6
Gate nonꢀtrigger current
mA
I
GD
Thermal
phaseꢀchange
material
Thermal resistance chip to sink
0,35
K/W
R th(j-s)
ʎ
=3,4W/mK
Rectifier Diode
Symbol
Parameter
Conditions
Value
Typ
Unit
V
T
r [V] IF [A] j [°C] Min
Max
Static
25
1,03
1,12
ꢀ
1,21
Forward voltage
Reverse leakage current
77
125
150
25
V
VF
50
1600
µA
I r
150
1100
Thermal
phaseꢀchange
material
Thermal resistance junction to sink
0,50
K/W
R th(j-s)
ʎ
=3,4W/mK
Copyright Vincotech
6
14 Aug. 2015 / Revision 2
VINCOTECH [ VINCOTECH ]
