V23990-P589-*4*-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
25
32
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
50
A
Th=80°C
Tc=80°C
52
79
W
°C
Tjmax
175
Brake Transistor
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
V
A
Th=80°C
Tc=80°C
18
22
Tj=Tjmax
ICpuls
tp limited by Tjmax
Pulsed collector current
45
50
A
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
VCE ≤ 1200V, Tj ≤ Top max
A
Th=80°C
Tc=80°C
53
80
Ptot
Tj=Tjmax
W
V
VGE
±20
tSC
Tj≤150°C
10
µs
V
VCC
VGE=15V
800
Tjmax
Maximum Junction Temperature
175
°C
Brake Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
V
A
Th=80°C
Tc=80°C
14
19
Tj=Tjmax
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
20
A
Th=80°C
Tc=80°C
29
44
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
2
Revision: 2
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