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V23990-P588-C41-PM 参数 Datasheet PDF下载

V23990-P588-C41-PM图片预览
型号: V23990-P588-C41-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives mbedded drives]
分类和应用:
文件页数/大小: 23 页 / 1399 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P588-*4*-PM  
preliminary datasheet  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
ID [A]  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=150°C  
0,8  
1,16  
1,13  
0,90  
0,78  
8,00  
11,00  
1,6  
VF  
Vto  
rt  
Forward voltage  
30  
30  
30  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
20  
2
Ir  
1500  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
1,89  
Inverter Transistor  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
5
5,8  
6,5  
2,25  
0,005  
200  
VGE(th) VCE=VGE  
0,0005  
15  
V
V
0,8  
1,84  
2,25  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
1200  
0
mA  
nA  
20  
-
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
85  
85  
17  
Rise time  
22  
ns  
201  
264  
82  
123  
0,817  
1,255  
0,878  
1,358  
td(off)  
tf  
Turn-off delay time  
Rgoff=32 ꢀ  
Rgon=32 ꢀ  
600  
15  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
900  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
80  
Reverse transfer capacitance  
Gate charge  
55  
±15  
120  
nC  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
1,67  
Inverter Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
1,35  
1,61  
1,50  
25  
26  
153  
2,05  
VF  
IRRM  
trr  
Diode forward voltage  
15  
15  
V
A
Peak reverse recovery current  
Reverse recovery time  
ns  
313  
1,35  
2,98  
1700  
776  
0,518  
1,259  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=32 ꢀ  
600  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50um  
λ = 1 W/mK  
RthJH  
K/W  
Thermal resistance chip to heatsink per chip  
2,17  
copyright Vincotech  
3
Revision: 2