V23990-P588-*4*-PM
preliminary datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Brake Transistor
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,15
0,005
200
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,0005
15
V
V
1,3
1,82
2,23
15
0
mA
nA
ꢀ
20
0
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
53
55
18
Rise time
23
ns
169
231
82
119
0,47
0,75
0,44
0,68
td(off)
tf
Turn-off delay time
Rgoff=32 ꢀ
Rgon=32 ꢀ
600
15
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
490
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
50
Reverse transfer capacitance
Gate charge
30
90
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
2,20
Brake Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,3
2,31
1,89
2,2
5
VF
Ir
Diode forward voltage
10
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
1200
8
10
IRRM
trr
A
273
415
0,92
0,92
68
65
0,38
0,70
ns
Rgon=32 ꢀ
Rgon=32 ꢀ
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
3,28
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
R
∆R/R
P
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
-5
5
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
4
Revision: 2
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