V23990-P588-*88-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0,8
1,16
1,13
0,90
0,78
8
1,6
VF
Vto
rt
Forward voltage
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
11
12
2
Ir
1500
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,89
1,68
Preapplied
Phase change
material
RthJH
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,1
VGE(th) VCE=VGE
0,00085
V
V
1,6
1,87
2,29
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,0024
100
1200
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
71
72
19
Rise time
22
ns
194
250
79
110
0,50
0,80
0,43
0,66
td(off)
tf
Turn-off delay time
Rgoff=32 ꢀ
Rgon=32 ꢀ
600
25
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1430
115
85
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
960
8
53
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
2,16
1,87
Preapplied
Phase change
material
RthJH
K/W
Inverter Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,35
1,88
1,81
8
2,05
VF
IRRM
trr
Diode forward voltage
1200
V
A
Peak reverse recovery current
Reverse recovery time
10
251
411
0,89
1,72
84
64
0,34
0,69
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=32 ꢀ
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
2,68
2,37
Preapplied
Phase change
material
RthJH
copyright Vincotech
3
Revision: 1
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