V23990-P586-*2*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Brake Transistor
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
4,1
1,1
4,9
5,7
1,9
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00043
30
V
V
1,55
1,74
0,04
1,00
15
0
600
0
mA
nA
ꢀ
300
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
95
95
16
Rise time
19
ns
141
157
86
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
300
30
Fall time
99
0,50
0,72
0,63
0,85
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1630
108
50
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
167
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
2,07
1,78
Preapplied
Phase change
material
RthJH
K/W
Brake Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,25
1,42
1,28
1,95
27
VF
Ir
Diode forward voltage
20
20
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
600
300
19
20
33
237
0,81
0,81
1684
920
0,14
0,30
IRRM
trr
A
ns
Rgon=16 ꢀ
Rgon=16 ꢀ
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
15
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
3,58
3,11
Preapplied
Phase change
material
RthJH
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
R
∆R/R
P
Tj=25°C
T=25°C
T=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
-5
5
200
2
mW
mW/K
K
B(25/50)
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
copyright Vincotech
4
Revision: 2
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