V23990-P586-*2*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0,8
1,16
1,13
0,90
0,78
8
1,6
VF
Vto
rt
Forward voltage
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
0,83
mꢀ
mA
11
Ir
1500
2
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,89
1,19
Preapplied
Phase change
material
RthJH
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
VGE(th) VCE=VGE
0,0008
50
V
V
1,76
2,06
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0,04
1
600
600
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
168
171
23
Rise time
27
ns
213
228
84
100
1,19
1,60
1,20
1,55
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
300
50
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
3140
200
93
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
310
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,25
1,06
Preapplied
Phase change
material
RthJH
K/W
Inverter Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,2
1,85
1,94
37
1,9
VF
IRRM
trr
Diode forward voltage
50
V
A
Peak reverse recovery current
Reverse recovery time
42
144
217
1,9
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 ꢀ
µC
3,4
di(rec)max
/dt
1568
1145
0,31
0,60
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
K/W
K/W
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
1,65
1,4
Preapplied
Phase change
material
RthJH
copyright Vincotech
3
Revision: 2
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