V23990-P580-*4*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
ID [A]
Input Rectifier Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
0,8
1,16
1,13
0,90
0,78
8
1,6
VF
Vto
rt
Forward voltage
30
30
30
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
mꢀ
mA
11
20
2
Ir
1500
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,89
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,8
6,5
2,3
0,5
300
VGE(th) VCE=VGE
0,0012
35
V
V
1,6
1,95
2,39
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
1200
0
mA
nA
ꢀ
20
-
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
92
92
18
Rise time
23
ns
213
274
75
105
1,62
2,49
1,81
2,82
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=16 ꢀ
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
Eoff
Cies
Coss
QGate
1950
f=1MHz
0
25
Tj=25°C
Tj=25°C
pF
nC
Output capacitance
155
Gate charge
Vcc=960V
±15
35
270
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,20
K/W
Inverter Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
1,83
1,80
69
2,2
VF
IRRM
trr
Diode forward voltage
35
35
V
A
Peak reverse recovery current
Reverse recovery time
79
150
277
3,93
7,47
4100
2080
1,69
3,31
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=16 ꢀ
1200
µC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
1,55
K/W
copyright Vincotech
3
Revision: 2
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