V23990-P546-*3*-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Brake Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,2
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00029
20
V
V
1,58
1,76
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0,0011
300
0
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
15
14
12
Rise time
15
ns
197
220
100
119
0,31
0,43
0,53
0,67
td(off)
tf
Turn-off delay time
Rgoff=8 ꢀ
Rgon=16 ꢀ
±15
300
20
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1100
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
71
Reverse transfer capacitance
Gate charge
32
±15
480
20
120
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
2,30
K/W
Brake Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,25
1,83
1,76
1,95
27
VF
Ir
Diode forward voltage
20
20
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Rgon=16 ꢀ
Rgon=16 ꢀ
300
300
18
21
31
197
0,39
0,39
1762
927
0,05
0,25
IRRM
trr
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
A/µs
mWs
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,04
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
%
∆R/R R100=1486 ꢀ
-5
5
P
210
3,5
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
B(25/100)
B-value
4000
K
Vincotech NTC Reference
A
copyright Vincotech
4
Revision: 4
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