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V23990-P546-C28-PMw/oBRC 参数 Datasheet PDF下载

V23990-P546-C28-PMw/oBRC图片预览
型号: V23990-P546-C28-PMw/oBRC
PDF下载: 下载PDF文件 查看货源
内容描述: [Industrial drives Embedded drives]
分类和应用:
文件页数/大小: 23 页 / 811 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P546-*2*-PM  
Characteristic Values  
Conditions  
Value  
Typ  
Parameter  
Symbol  
Unit  
Vr [V] or  
VGE [V] or  
IC [A] or  
IF [A] or  
ID [A]  
VCE [V] or  
Tj  
Min  
Max  
VGS [V]  
VDS [V]  
Input Rectifier Diode  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=125°C  
Tj=25°C  
Tj=145°C  
0,8  
1,26  
1,24  
0,92  
0,82  
11  
1,45  
VF  
Vto  
rt  
Forward voltage  
30  
30  
30  
V
V
Threshold voltage (for power loss calc. only)  
Slope resistance (for power loss calc. only)  
Reverse current  
m  
mA  
14  
Ir  
1500  
1,1  
Thermal grease  
RthJH  
Thermal resistance chip to heatsink per chip  
thickness50µm  
λ = 1 W/mK  
2,10  
K/W  
Inverter Transistor  
Gate emitter threshold voltage  
Collector-emitter saturation voltage  
Collector-emitter cut-off current incl. Diode  
Gate-emitter leakage current  
Integrated Gate resistor  
Turn-on delay time  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
5
5,8  
6,5  
1,9  
VGE(th) VCE=VGE  
0,00043  
50  
V
V
1,1  
1,67  
1,90  
VCE(sat)  
ICES  
IGES  
Rgint  
td(on)  
tr  
15  
0
0,0016  
300  
600  
0
mA  
nA  
20  
none  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
17  
18  
16  
Rise time  
18  
ns  
156  
172  
88  
101  
0,52  
0,71  
0,72  
0,90  
td(off)  
tf  
Turn-off delay time  
Rgoff=4 ꢀ  
Rgon=8 ꢀ  
±15  
300  
30  
Fall time  
Eon  
Turn-on energy loss per pulse  
Turn-off energy loss per pulse  
Input capacitance  
mWs  
pF  
Eoff  
Cies  
Coss  
Crss  
QGate  
1630  
108  
50  
Output capacitance  
f=1MHz  
0
25  
Tj=25°C  
Tj=25°C  
Reverse transfer capacitance  
Gate charge  
±15  
480  
30  
167  
nC  
Thermal grease  
thickness50µm  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
1,76  
K/W  
Inverter Diode  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
Tj=25°C  
Tj=150°C  
1,25  
1,64  
1,66  
25  
1,95  
VF  
IRRM  
trr  
Diode forward voltage  
30  
30  
V
A
Peak reverse recovery current  
Reverse recovery time  
28  
176  
256  
1,36  
2,45  
1521  
932  
0,27  
0,51  
ns  
Qrr  
Reverse recovered charge  
Peak rate of fall of recovery current  
Reverse recovered energy  
Rgon=8 ꢀ  
±15  
300  
µC  
di(rec)max  
/dt  
A/µs  
mWs  
Erec  
Thermal grease  
thickness50µm  
λ = 1 W/mK  
RthJH  
Thermal resistance chip to heatsink per chip  
2,40  
K/W  
copyright Vincotech  
3
Revision: 5