V23990-P541-*3*-PM
Characteristic Values
Conditions
Value
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Typ
Max
VGS [V]
VDS [V]
Brake Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
6,5
2,1
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00009
30
V
V
1,54
1,72
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0,06
350
0
600
0
mA
nA
ꢀ
20
none
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
11
11
8
Rise time
11
ns
112
127
87
100
0,08
0,11
0,14
0,17
td(off)
tf
Turn-off delay time
Rgoff=16 ꢀ
Rgon=32 ꢀ
±15
300
6
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
368
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
28
Reverse transfer capacitance
Gate charge
11
±15
480
6
42
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
3,06
K/W
Brake Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,63
1,56
2,5
60
VF
Ir
Diode forward voltage
6
6
V
ꢁA
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Rgon=32 ꢀ
Rgon=32 ꢀ
600
300
7
7
96
165
0,23
0,23
442
268
0,04
0,09
IRRM
trr
A
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
±15
µC
A/µs
mWs
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink per chip
4,09
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
22000
ꢀ
%
∆R/R R100=1486 ꢀ
-5
5
P
210
3,5
mW
mW/K
K
B(25/50)
Tol. ±3%
Tol. ±3%
B(25/100)
B-value
4000
K
Vincotech NTC Reference
A
copyright Vincotech
4
Revision: 4
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